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  1/12 advance data november, 19 2002 pd57045 PD57045S rf power transistors the ldmost family n-channel enhancement-mode lateral mosfets ? excellent thermal stability ? common source configuration ? p out = 45 w with 13 db gain @ 945 mhz / 28v ? new rf plastic package description the pd57045 is a common source n-channel, enhancement-mode lateral field-effect rf power transistor. it is designed for high gain, broad band commercial and industrial applications. it operates at 28 v in common source mode at frequencies of up to 1 ghz. pd57045 boasts the excellent gain, linearity and reliability of sts latest ldmos technology mounted in the first true smd plastic rf power package, powerso-10rf. PD57045S superior linearity performance makes it an ideal solution for base station applications. the powerso-10 plastic package, designed to offer high reliability, is the first st jedec approved, high power smd package. it has been specially optimized for rf needs and offers excellent rf performances and ease of assembly. powerso-10rf (formed lead) order code pd57045 branding pd57045 powerso-10rf (straight lead) order code PD57045S branding PD57045S absolute maximum ratings (t case = 25 c) symbol parameter value unit v (br)dss drain-source voltage 65 v v gs gate-source voltage 20 v i d drain current 5 a p diss power dissipation (@ tc = 70 c) 73 w tj max. operating junction temperature 165 c t stg storage temperature -65 to +150 c thermal data r th(j-c) junction -case thermal resistance 1.2 c/w mounting recommendations are available in www.st.com/rf/ (look for application note an1294)
pd57045 - PD57045S 2/12 electrical specification (t case = 25 c) static dynamic impedance data symbol test conditions min. typ. max. unit v (br)dss v gs = 0 v i ds = 1 ma 65 v i dss v gs = 0 v v ds = 28 v 1 m a i gss v gs = 20 v v ds = 0 v 1 m a v gs(q) v ds = 28 v i d = 250 ma 2.0 5.0 v v ds(on) v gs = 10 v i d = 3 a 0.7 0.9 v g fs v ds = 10 v i d = 4 a 2.0 2.7 mho c iss v gs = 0 v v ds = 28 v f = 1 mhz 86 pf c oss v gs = 0 v v ds = 28 v f = 1 mhz 47 pf c rss v gs = 0 v v ds = 28 v f = 1 mhz 3.6 pf symbol test conditions min. typ. max. unit p 1db v dd = 28 v i dq = 250 ma f = 945 mhz 45 w g p v dd = 28 v i dq = 250 ma p out = 45 w f = 945 mhz 13 14.5 db h d v dd = 28 v i dq = 250 ma p out = 45 w f = 945 mhz 50 % load mismatch v dd = 28 v i dq = 250 ma p out = 45 w f = 945 mhz all phase angles 10:1 vswr pin connection gate source drain sc15200 typical input impedance typical drain load impedance g d s z dl zin sc13140 PD57045S freq. mhz z in ( w )z dl ( w ) 925 .71 + j 2.32 1.29 - j .35 945 .69 + j 2.92 1.25 - j .29 960 .55 + j 2.78 1.18 - j .83
3/12 pd57045 - PD57045S capacitance vs. drain voltage 0 5 10 15 20 25 30 vds (v) 1 10 100 1000 c (pf) ciss coss crss f= 1 m h z drain current vs. gate voltage 2.5 3 3.5 4 4.5 5 vgs, gate-source voltage (v) 0 0.5 1 1.5 2 2.5 3 3.5 4 id, drain current (a) vds= 10 v gate-source voltage vs. case temperature -25 0 25 50 75 tc, case temperature (c) 0.96 0.98 1 1.02 1.04 vgs, gate-source voltage (normalized) i d = 1.5 a i d = 2a i d = 3a v ds = 10 v i d = .25 a i d = 1 a safe operating area 1 10 100 vds (v) 0.1 1 10 id (a) tc = 100 c tc = 25 c tc = 70 c tj = 165 c o o o o typical performance
pd57045 - PD57045S 4/12 typical performance output power vs. input power 00.511.522.533.5 pin, input power (w) 0 10 20 30 40 50 60 pout, output power (w) 10 11 12 13 14 15 16 gp, power gain (db) gp pout v dd = 28 v i dq = 250 ma f = 945 mhz power gain vs. output power 0.1 1 10 100 pout, output power (w) 10 11 12 13 14 15 16 17 gp, power gain (db) idq = 450 ma idq = 250 ma idq = 150 ma idq = 75 ma vdd = 28 v f = 945 mhz drain efficiency vs. output power drain efficiency vs. bias current 0 102030405060 pout, output power (w) 0 10 20 30 40 50 60 nd, drain efficiency (%) f = 945 mhz vdd = 28 v idq = 250 ma 0 102030405060 pout, output power (w) -40 -30 -20 -10 0 rtl, return loss (db) f = 945 mhz vdd = 28 v idq = 250 ma 0 200 400 600 800 1000 idq, bias current (ma) 20 30 40 50 60 pout, output power (w) pin = 1.5 w vdd = 28 v f = 945 mhz 0 200 400 600 800 1000 idq, bias current (ma) 30 40 50 60 70 nd, drain efficiency (%) pin = 1.5 w vdd = 28 v f = 945 mhz return loss vs. output power output power vs. bias current PD57045S
5/12 pd57045 - PD57045S typical performance output power vs. drain voltage 16 18 20 22 24 26 28 30 32 34 vds, drain-source voltage (v) 10 20 30 40 50 60 70 80 pout, output power (w) pin = 2 w pin = 1 w pin =3 w pin = 1.5 w f = 945 mhz vdd = 28 v idq = 250 ma output power vs. gate bias voltage 0 0.5 1 1.5 2 2.5 3 3.5 4 vgs, gate bias voltage (v) 0 10 20 30 40 50 pout, output power (w) pin = 1.5 w vdd = 28 v f = 945 mhz
pd57045 - PD57045S 6/12 test circuit schematic test circuit component part list component description l1,l2 inductor, 5 turns air wound #22awg, id 0.059{1.49}, nylon coated magnet wire fb1,fb2 shield bead surface mount emi r1 18 k ohm, 1 w surface mount chip resistor r2 4.7 m ohm, 1 w surface mount chip resistor r3 120 ohm, 2 w surface mount chip resistor c1,c2 3 pf atc 100b surface mount ceramic chip capacitor c3,c10,c11,c15 47 pf atc 100b surface mount ceramic chip capacitor c4,c9 0.8-8.0 pf giga trim variable capacitor c5,c6,c7,c8 7.5 pf atc 100b surface mount ceramic chip capacitor c12 1000 pf atc 700b surface mount ceramic chip capacitor c13,c17 0.1 m f/500 v surface mount ceramic chip capacitor c14 10 m f/50 v aluminum electrolytic radial lead capacitor c16 100 pf atc 100b surface mount ceramic chip capacitor c18 220 m f/63 v aluminum electrolytic radial lead capacitor board roger, ultra lam 2000, thk 0.030, e r = 2.55 2oz. ed cu 2 sides. v in rf g g + + out rf + d + d v notes: 1. dimensions at component symbols are reference for component placement. 2. gap between ground & transmission line = 0.056 [1.42] +0.002 [0.05] -0.000 [0.00] typ. 3. dimensions of input and output component from edge of transmission lines.
7/12 pd57045 - PD57045S test circuit test circuit photomaster 6.4 inches 4 inches
pd57045 - PD57045S 8/12 common source s-parameter (PD57045S) (v ds = 13.5v i ds = 1.5a) freq is 11 is 11 ef is 21 is 21 ef is 12 is 12 ef is 22 is 22 ef (mhz) 50 0.825 -170 14.34 85 0.014 -1 0.819 -171 100 0.875 -173 6.94 79 0.013 -6 0.824 -175 150 0.895 -175 4.67 75 0.013 -10 0.828 -175 200 0.908 -176 3.44 70 0.013 -14 0.837 -176 250 0.910 -177 2.70 65 0.012 -16 0.842 -176 300 0.916 -178 2.20 60 0.012 -18 0.854 -176 350 0.922 -178 1.82 55 0.011 -23 0.864 -176 400 0.926 -179 1.55 51 0.010 -25 0.874 -176 450 0.933 -179 1.32 47 0.010 -25 0.883 -177 500 0.937 -179 1.14 44 0.008 -25 0.893 -177 550 0.942 -180 1.00 40 0.008 -24 0.901 -177 600 0.946 180 0.88 37 0.007 -25 0.912 -177 650 0.949 180 0.79 34 0.007 -25 0.915 -178 700 0.951 179 0.70 32 0.006 -20 0.922 -178 750 0.954 179 0.63 29 0.005 -23 0.926 -179 800 0.958 178 0.57 27 0.005 -14 0.932 -179 850 0.961 178 0.52 24 0.004 -6 0.932 -180 900 0.963 178 0.47 22 0.004 3 0.942 179 950 0.964 177 0.44 20 0.004 1 0.942 180 1000 0.966 177 0.40 18 0.004 7 0.943 179 1050 0.967 176 0.37 16 0.003 26 0.946 179 1100 0.966 176 0.35 15 0.003 51 0.949 178 1150 0.969 176 0.32 13 0.003 56 0.950 179 1200 0.970 175 0.30 11 0.004 62 0.953 179 1250 0.970 175 0.29 9 0.004 55 0.967 178 1300 0.971 175 0.26 7 0.004 65 0.972 176 1350 0.972 174 0.25 6 0.004 71 0.958 176 1400 0.972 174 0.23 4 0.005 81 0.961 176 1450 0.970 174 0.22 3 0.006 91 0.958 175 1500 0.970 173 0.20 2 0.007 100 0.963 175
9/12 pd57045 - PD57045S common source s-parameter (PD57045S) (v ds = 28v i ds = 1.5a) freq is 11 is 11 ef is 21 is 21 ef is 12 is 12 ef is 22 is 22 ef (mhz) 50 0.829 -161 20.72 92 0.012 2 0.718 -166 100 0.872 -168 10.33 82 0.011 -6 0.731 -170 150 0.897 -172 6.84 74 0.011 -10 0.745 -171 200 0.910 -174 5.02 68 0.010 -14 0.765 -171 250 0.913 -175 3.86 61 0.010 -17 0.783 -171 300 0.922 -176 3.10 55 0.009 -23 0.803 -171 350 0.928 -176 2.53 50 0.009 -25 0.823 -172 400 0.934 -177 2.12 45 0.008 -27 0.839 -172 450 0.941 -178 1.79 41 0.007 -26 0.856 -172 500 0.946 -178 1.53 37 0.006 -26 0.872 -173 550 0.949 -179 1.32 34 0.005 -27 0.884 -174 600 0.955 -179 1.16 31 0.005 -24 0.898 -174 650 0.959 -180 1.03 27 0.004 -18 0.902 -175 700 0.960 180 0.91 25 0.004 -17 0.914 -175 750 0.963 179 0.81 22 0.003 -7 0.919 -176 800 0.967 179 0.73 19 0.003 -1 0.928 -176 850 0.968 178 0.67 17 0.003 11 0.927 -177 900 0.968 178 0.60 15 0.003 28 0.937 -178 950 0.972 178 0.55 12 0.003 36 0.939 -178 1000 0.972 177 0.50 11 0.003 56 0.94 -179 1050 0.972 177 0.49 9 0.003 56 0.944 -179 1100 0.972 176 0.43 7 0.004 63 0.950 -180 1150 0.974 176 0.40 5 0.004 66 0.950 -179 1200 0.975 176 0.37 4 0.005 72 0.950 -180 1250 0.975 175 0.35 3 0.006 75 0.968 180 1300 0.976 175 0.32 0 0.006 77 0.973 178 1350 0.977 174 0.30 -1 0.006 81 0.960 178 1400 0.976 174 0.28 -2 0.006 84 0.960 177 1450 0.973 174 0.26 -3 0.007 98 0.958 177 1500 0.973 174 0.25 -4 0.008 102 0.963 176
pd57045 - PD57045S 10/12 powerso-10rf formed lead (gull wing) mechanical data mm inch min. typ. max min. typ. max a1 0 0.05 0.1 0. 0.0019 0.0038 a2 3.4 3.5 3.6 0.134 0.137 0.142 a3 1.2 1.3 1.4 0.046 0.05 0.054 a4 0.15 0.2 0.25 0.005 0.007 0.009 a 0.2 0.007 b 5.4 5.53 5.65 0.212 0.217 0.221 c 0.23 0.27 0.32 0.008 0.01 0.012 d 9.4 9.5 9.6 0.370 0.374 0.377 d1 7.4 7.5 7.6 0.290 0.295 0.298 e 13.85 14.1 14.35 0.544 0.555 0.565 e1 9.3 9.4 9.5 0.365 0.37 0.375 e2 7.3 7.4 7.5 0.286 0.292 0.294 e3 5.9 6.1 6.3 0.231 0.24 0.247 f 0.5 0.019 g 1.2 0.047 l 0.8 1 1.1 0.030 0.039 0.042 r1 0.25 0.01 r2 0.8 0.031 t 2 deg 5 deg 8 deg 2 deg 5 deg 8 deg t1 6 deg 6 deg t2 10 deg 10 deg dim. note (1): resin protrusions not included (max value: 0.15 mm per side) critical dimensions: - stand-off (a1) - overall width (l)
11/12 pd57045 - PD57045S powerso-10rf straight lead mechanical data critical dimensions: - overall width (l) note (1): resin protrusions not included (max value: 0.15 mm per side) mm inch min. typ. max min. typ. max a1 1.62 1.67 1.72 0.064 0.065 0.068 a2 3.4 3.5 3.6 0.134 0.137 0.142 a3 1.2 1.3 1.4 0.046 0.05 0.054 a4 0.15 0.2 0.25 0.005 0.007 0.009 a 0.2 0.007 b 5.4 5.53 5.65 0.212 0.217 0.221 c 0.23 0.27 0.32 0.008 0.01 0.012 d 9.4 9.5 9.6 0.370 0.374 0.377 d1 7.4 7.5 7.6 0.290 0.295 0.298 e 15.15 15.4 15.65 0.595 0.606 0.615 e1 9.3 9.4 9.5 0.365 0.37 0.375 e2 7.3 7.4 7.5 0.286 0.292 0.294 e3 5.9 6.1 6.3 0.231 0.24 0.247 f 0.5 0.019 g 1.2 0.047 r1 0.25 0.01 r2 0.8 0.031 t1 6 deg 6 deg t2 10 deg 10 deg dim.
pd57045 - PD57045S 12/12 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. htt p ://www.st.com


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